United States
Dielectric Response in Silicon Nanostructures from first principles
Hamel S., Williamson A., Wilson H., Gygi F., Galli G., Ratner E., Wack D., Lawrence Livermore National Laboratory, US
In the next few years, the typical size of finFET devices used in the microchip industry is expected to be of the order of a few nanometers. This poses formidable challenges, including for optical metrology, [...]