TW – Page 19 – TechConnect Briefs

Gallium Nitride Nanowire Enhanced High Intensity Discharge Luminance System

Tsai J.T.H., Liao Z.-J., Tatung University, TW

We produce an mercury-free, high efficiency HID lamp with the GaN nanostructure enhancer embedded. These dense GaN nanowires embedded into the HID electrodes can reduce 25% of ignition voltage and enhance the 17% of efficiency [...]

Effective Removal Module by Excimer Irradiation Assistance

Pa P.S., National Taipei University of Education, TW

A new design module using an excimer irradiation to assist in micro-electroremoval process as a precise recycle modus for the digital paper of the touch-panel offers a faster per-formance in removing the Indium-tin-oxide thin-films from [...]

Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio

Cheng H-W, Hwang C-H, Li Y., National Chiao Tung University, TW

For nano-CMOS device design, the device with multiple-fin structure has the superior short channel effect (SCE), high driving current and has been considered as an index as potential candidates. The feasibility of various multi-fin options [...]

Characteristic Variability of Novel Lateral Asymmetry Nano-MOSFETs Due to Random Discrete Dopants

Lee K-F, Hwang C-H, Li T-Y, Li Y., Li T-Y, Li Y., National Chiao Tung University, TW

In this paper, we for the first time investigate the random-dopant-induced device DC, the gate capacitance, the timing, and the high frequency characteristics fluctuations in nanoscale LAC devices. The conventional LAC device with higher channel [...]

Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices

Li T-Y, Li Y., Hwang C-H, Li T-Y, Li Y., National Chiao Tung University, TW

The magnitude of the intrinsic parameter fluctuations, such as process-variation and random dopant fluctuation, steadily increase with the reduction of device dimensions, and lead to pronounced component mismatch in area constrained circuits such as static [...]

Evaluation of Uncertainty in Nanoparticle Size Measurement by Electro-gravitational Aerosol Balance

Lin C-M, Yu T.-C., Pan S.-P., Wang H.-F., Chen C-J., Industrial Technology Research Institute, TW

A primary standard of particle size ranging from 100 nm to 500 nm in number mean diameter, based on the electro-gravitational aerosol balance, has been developed in Center for Measurement Standards of Industrial Technology Research [...]

Fabrications of Bifunctional Janus and Triblock Saturn Colloids

Lin C.C., Ho C.-C., Chang C-C, Kuo C., National Cheng Kung University, TW

A synthetic approach for the fabrications of Janus and Saturn colloids was demonstrated by the sequential embedment and surface modification of silica colloids. Electrospinning of poly(methyl methacrylate) (PMMA) and poly(4-vinyl pyridine) (P4VP) blends produced polymer [...]

Country: TW