SG – Page 3 – TechConnect Briefs

Analysis of GaN Grown on Vertically Standing Fractal-Like Si Nanostructures

Wee Q.X., Soh C.B., Zang K.Y., Chua S.J., Thompson C.V., National University of Singapore (NUS), SG

We have investigated the microstructure and optical properties of GaN grown on vertically standing Si nanostructures by MOCVD. The Si nanostructures array is formed by a simple metal-assisted etching of Si(111) substrates, where both metal [...]

Failure mechanism and property improvement of carbon-nanotube fibers

Zheng L., Nanyang Technological University, SG

Carbon-nanotube (CNT) fibers have already demonstrated the potentials of retaining the intrinsic properties of individual CNTs at a practical scale level. But current reports in this area show large variations and inconsistence in fiber’s properties, [...]

Effects of membrane pore morphology on fouling behavior of polymeric micro-fabricated membrane during crossflow micro-filtration

Warkiani M.E., Gong H.Q., Fane A.G., Wicaksana F., Nanyang Technological University, SG

Membrane pore morphology can have a significant effect on the rate of flux decline where the dominant fouling mechanism is pore blockage and cake formation. Commercial micro-filters cannot be used effectively for this purpose because [...]

Effects of membrane pore morphology on fouling behavior of polymeric micro-fabricated membrane during crossflow micro-filtration

Warkiani M.E., Gong H.Q., Fane A.G., Wicaksana F., Nanyang Technological University, SG

Membrane pore morphology can have a significant effect on the rate of flux decline where the dominant fouling mechanism is pore blockage and cake formation. Commercial micro-filters cannot be used effectively for this purpose because [...]

Hot-Carrier-Induced Current Degradation in Deep Sub-Micron MOSFETs from Subthreshold to Strong Inversion Region

Shihuan L., Nanyang Technology University, SG

In the past decades, as predicted by the Moore’s law, the IC circuit density increases to reduce the cost per chip and to achieve better performance. With critical device dimensions scaling down, the electrical field [...]

Charge Partition in Lateral Nonuniformly-Doped Transistor

Zhang J., Zhou X., Zhu G., Lin S., Nanyang Technological University, SG

In this work, we aim to model the LDMOS capacitance behavior of the core channel. In order to simplify the problem, the diffused doping profile in the core channel is approximated as a step profile. [...]

Xsim: A Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs

Zhou X., Nanyang Technological University, SG

This paper presents a unified compact model (Xsim) for bulk/SOI MOSFETs, double-gate (DG) FinFETs, and gate-all-around (GAA) silicon-nanowires (SiNWs) that has been under development over the past 13 years. One key feature of the model [...]

High Sensitivity Dielectric Filled Lamé Mode Resonator for Chemical and Biological Applications

Heidari A., Yoon YJ., Park WT., Lin J.T.M., Nanyang Technological University, SG

In recent years the use of micro and nano electromechanical (MEMS/NEMS) resonators for mass sensing applications has been extensively explored. In many applications, high sensitivity biomass sensors are required to sense small biological entities (e.g. [...]

Nano-mapping Material Interfaces via Hot Electrons

Goh K.E.J., Troadec C., Institute of Materials Research and Engineering, SG

As devices shrink below 100 nm in size, nanoscale imperfections (due to defects and doping) at material interfaces become significant perturbations to ideal device characteristics and in some cases can dominate the device behavior. Of [...]

Studies on the kinetic properties of photocatalytic degradation of phenol in water using ZnO nanopowder as a photocatalyst

Tao Y., Cheng Z.L., Ting K.E., Yin X.J., Singapore Polytechnic, SG

In recent years, advanced oxidation processes (AOPs) have been proved to be one of the most effective methods to remove organic pollutants from water and wastewater. These processes are based on the generation of the [...]