Papers:
Process Modeling Based on Atomistic Understanding for State of the Art CMOS Device Design
Chakravarthi S., Diebel M., Chidambaram P.R., Ekbote S., Dunham S.T., Machala C.F., Johnson S., Texas Instruments, US
Atomistic modeling methods are emerging as a powerful tool to understand the physical behavior of complex systems. However, continuum process simulators are the core of state of the art TCAD simulators and substantial challenges must [...]
Practical Atomistic Dopant Diffusion Simulation of Shallow Junction Fabrication Processes and Intrinsic Fluctuations for sub-100nm MOSFETs
We studied sophisticated shallow junction fabrication processes, i.e. spike-annealing and flash-lamp annealing, using our recently developed atomistic dopant diffusion simulator. Through its use of kinetic Monte Carlo procedure, considering all the possible charged species and [...]
Study of Alloy Disorder in Quantum Dots through Multi-million Atom Simulations
A tight binding model which includes s, p, d and s* orbitals is used to examine the electronic structures of an ensemble of dome-shaped In0.6Ga0.4As quantum dots. Given ensembles of identically sized quantum dots, variations [...]
Merging Atomistic and Continuum Simulations of Silicon Technology – The Best from the Two Worlds
Simulation of diffusion processes during front-end silicon process stepes needs to address a variety of highly complicated phenomena. In industrial environments, such simulations are nearly entirely based on continuum approaches. The physics entering into the [...]
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Industry sector: Advanced Materials & Manufacturing
Topics: MEMS & NEMS Devices, Modeling & Applications, Nanoelectronics
ISBN: 0-9728422-1-7