Iwasaki T., Zhong G., Yoshida T., Aikawa T., Morikane R., Kawarada H.
Waseda University, JP
Keywords: millimeter long, root growth mode, vertically aligned SWNT
Controlling the growth direction of SWNTs on a substrate is one of the most important issues for fabrication of SWNT-based applications, such as field effect transistors (FETs) and interconnects for LSI. We have succeeded in synthesizing vertically aligned SWNTs with lengths on the order of millimeters for a long time deposition by a point-arc microwave plasma CVD. The height of SWNTs is 1.5mm in 10 hours. The Fe catalytic particles were kept active after the growth of SWNTs for more than 20 hours. A surface density of 1E16/m2 was obtained and this value corresponds to 1/10 of the closed-packed density. High density is very attractive for multi-layer interconnects for LSI and a super capacitor. We also clarified the growth mode of vertically aligned SWNTs using a new method called Marker Growth. Two layers of SWNTs were synthesized intermittently for different growth times. Considering the thickness and the growth time, we could identify the two layers using a line between the layers as a marker. As a result, the root growth mode of vertically aligned SWNTs was successfully clarified.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Published: May 7, 2006
Pages: 94 - 97
Industry sector: Advanced Materials & Manufacturing
Topic: Carbon Nano Structures & Devices
ISBN: 0-9767985-6-5