Rahman A., Ren Z., Rhew J-H., Lundstrom M.S.
Purdue University, US
Keywords: compact scattering model, nanoscale MOSFETs
A new compact model for nanoscale MOSFETs based on scattering theory is proposed for the full range of VGS and VDS covering sub-threshold, linear and saturation regions of operation. Quantum confinement and carrier degeneracy are fully accounted for in this model. The model is continuous above and below threshold and from the linear to saturated regions. It works all the way to ballistic limit. Using this model, the I-V characteristics of a symmetric Double Gate MOSFET are simulated and compared with 2D numerical simulation. The analytical model shows good agreement with full 2D simulation.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 554 - 557
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4