Böhm P., Wachutka G.
Münich University of Technology, DE
Keywords: distributed parasitic effects, finite element method, interconnects, transient analysis
This paper presents a methodology for the analysis of the transient electromagnetic behavior of multiply contacted interconnects. It is shown that for applications with high switching frequencies and high pulse repetition rates with subsequent steep current ramps, the usual characterization of interconnects by extracting an inductance matrix based on a static current distribution is not sucient and has to be extended or even replaced by the determination of distributed transient fields and the specification of time-dependent characteristic quantities. It is demonstrated that only a full three-dimensional transient analysis under realistic switching conditions can give the necessary insight in the time-dependent behavior of the electric and magnetic fields in- and outside the interconnects. The method is illustrated by an example encountered in an industrial high power application.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 301 - 304
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6