Shing T-K, Tai C.H., Lee Y.D., Tien C.C.
ITRI, TW
In recent years we have witnessed the explosive growth of wireless communication services. The future trend of wireless products is towards integration, size and cost reduction. With MEMS technologies, the thin film bulk acoustic wave resonator (FBAR), as shown in Fig, can fulfill these goals. In the filter applications, FBAR has many advantages over Surface Acoustic Wave (SAW), such as size, power handling, integration, and loss issues. To further improve the performance of FBAR devices, auxiliary components such as an inductor or a capacitor or often used. For example, the narrow bandwidth and rejection isolation are often improved by adding such auxiliary component. However, systematic methods and discussions to implement such components are lack. This paper will discuss the effects of such components on the resonant frequency and the design of FBAR filters from a circuit viewpoint. Also, the power handling issue will be examined here. The discussion and conclusion could be very helpful to the implementation of FBAR filter and duplexer.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1
Published: February 23, 2003
Pages: 348 - 351
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications
ISBN: 0-9728422-0-9