Chia A.C.E., LaPierre R.R.
McMaster University, CA
Keywords: nanowire, passivation, photovoltaic, solar cell, surface depletion, surface recombination
Fabrication, electrical characterization and analytical modeling of an AlInP-passivated GaAs NW ensemble is presented. Novel processing steps were used to fabricate NW ensemble devices which were subsequently characterized electrically and fit with an analytical model, showing a 48% reduction in interface state density and impressive four order of magnitude increase in effective carrier concentration of the NWs, rivaling the performance of other passivation schemes reported in literature. This is the first known report of surface passivation of a NW ensemble device with a III-V shell and demonstrated by electrical characterization of a whole ensemble of NWs.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: May 12, 2013
Pages: 25 - 28
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4822-0584-8