Combining soft x-ray lithography with SiN mask membrane and newly developed high contrast negative resist mr-X (micro resist technology GmbH, Berlin, Germany) enables the cost-effective patterning of sub-micrometer high aspect ratio structures. This work builds upon a new negative-tone, epoxy-based x-ray resist which offers comparable contrast to PMMA > 3) at a factor of 20x higher sensitivity. Using a 1µm thick SiN membrane mask with a ~1µm thick Au absorber, patterns were transferred into 10µm thick resist using the soft exposure mode at the BESSY WLS beamline. With typical exposure of a few minutes very precise grating and filter structures can be fabricated with dimensions down to about 500nm.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 188 - 191
Industry sector: Sensors, MEMS, Electronics
Topics: MEMS & NEMS Devices, Modeling & Applications