Simulation of Manufacturing Variations in a Z-axis CMOS-MEMS Gyroscope

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This paper uses MEMS circuit-level simulation to correlate gyro performance measures such as zero rate output (ZRO), linear acceleration sensitivity (Sa) and cross-axis sensitivity (Sca) to geometrical asymmetries. Elastic and electrostatic asymmetries in the gyroscope may arise due to device-level manufacturing variations in beam width, comb gap and metal mask misalignment in the CMOS-MEMS process. Analytical equations for the non-idealities are derived and compared with the simulation results. The analyses and simulations are used to develop pointers for robust design as well as manufacturing tolerances for limiting nonidealities.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 186 - 189
Industry sector: Sensors, MEMS, Electronics
Topicss: MEMS & NEMS Devices, Modeling & Applications, Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1