Galup-Montoro C., Schneider M.C., Arnaud A., Klimach H.
Universidade Federal de Santa Catarina, BR
Keywords: analog design, compact models, matching, MOSFET, noise
This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, consistent dc, ac, noise, and mismatch models for all operating modes of the MOSFET are described. Experimental results confirm the accuracy of both mismatch and noise models under various bias conditions.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: March 7, 2004
Pages: 494 - 499
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9728422-8-4