Structural miniaturization provides us with a new freedom that is indeed fascinating. The new freedom of size not only allows us to tune the physical and chemical properties of a specimen by simply adjusting the shape and size but also enables us to gain information that is beyond the scope of conventional approaches. Here we show that a recent bond order-length-strength (BOLS) correlation could reconcile the size effect on nanosolid silicon with elucidation of information such as the single energy level of an isolated Si atom, the frequency of Si-Si dimer vibration, the upper limit of photoabsorption/emission, and dielectric suppression.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: May 8, 2005
Pages: 554 - 556
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation