Darbari S., Shahmohammadi M., Mohajerzadeh S., Robertson M.D.
Thin Film and Nanoelectronics Laboratories, IR
Keywords: electroluminescence, light emitting diode, Si-nano-crystal
Si-nano-crystal (Si-nc) layers with luminescent behavior on glass substrate have been prepared using a time multiplexed plasma hydrogenation and reactive ion etching at temperatures below 450oC. Various techniques such as SEM, Photo-luminescent and TEM analyses were used to investigate the multilayered structures and their luminescent behavior. This approach has been utilized to realize multilayered light emitting diodes on glass substrates and electro-luminescent examination has been used to further study the fabricated diode structures. RF-plasma enhanced CVD was applied to deposit an amorphous-Si layer on a glass substrate while an in-situ hydrogenation step has been applied to realize nano-scale crystal grains embedded in the amorphous medium.
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2011: Advanced Materials, CNTs, Particles, Films and Composites
Published: June 13, 2011
Pages: 803 - 806
Industry sectors: Advanced Materials & Manufacturing | Energy & Sustainability
Topic: Sustainable Materials
ISBN: 978-1-4398-7142-3