Printed High-performance Carbon Nanotube Thin Film Transistors Based on Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-2,1-3-thiadiazole)] (PFO-BT) Sorted Large-diameter Semiconducting Carbon Nanotubes (sc-SWCNTs)

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Here we report a simple and valid method to fabricate printed top-gate thin-film transistors (TFTs) with based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-2,1-3-thiadiazole)] (PFO-BT) sorted semiconducting carbon nanotubes (SWNTs) from arc discharge carbon nanotubes. Sorted sc-SWCNT inks were directly printed on pre-patterned gold electrode arrays on SiO2/Si substrates by aerosol jet printing. Printed bottom-gate TFTs with mobility up to 35.5 cm2/Vs and on/off ratio up to 106 could be achieved after only printing 2 times (Figure 1). Interestingly, printed top-gate TFTs also showed excellent electrical properties with high on/off ratio and high mobility using chemical vapor deposition of parylene thin films as dielectric layer and printing silver electrodes as top-gated electrodes by aerosol jet printing. In addition, printed inverters based on the printed top-gate TFTs have been constructed, and a maximum voltage gain can reach 0.9 at Vdd of -5 V.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2014: Graphene, CNTs, Particles, Films & Composites
Published: June 15, 2014
Pages: 13 - 16
Industry sector: Advanced Materials & Manufacturing
Topics: Carbon Nano Structures & Devices, Graphene & 2D-Materials
ISBN: 978-1-4822-5826-4