Preparation and Characterization of Nanocrystalline GaP

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Nanoparticles of GaP have been prepared by the methods of mild aqueous synthesis, gas transport reactions and laser assisted deposition. Transfer of Ga and P by iodine and the next synthesis create onto a substrate a system of nanoparticles with the design and dimensions controlled by temperature. Interaction of laser plasma produced of a GaP target with a Si substrate creates the layer of nanoparticles with dimensions controlled by temperature, while the composition of them is (GaP) – (Si) solid solutions consisting of pure Si at the border with the substrate up to pure GaP at the surface of the layer. Spectra of luminescence and Raman light scattering of the particles prepared by these methods have been compared with those from perfect bulk crystals. Obviously, this new subject – the ordered mixture of nanoparticles with variable chemical composition gives additional opportunities for the shift and broadening of fluorescent spectra compared with the initial bulk materials.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 194 - 197
Industry sector: Advanced Materials & Manufacturing
Topic: Advanced Manufacturing
ISBN: 0-9767985-8-1