Phonon-assisted tunnelling mechanism of conduction in SnO2 and ZnO nanowires

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Non-linear temperature-dependent current-voltages characteristics of SnO2 nanowires measured by Ma et al [2005 Solid State Commun 130 313] and single ZnO nanorods from {J.Y. Park et al., 2006 Nanotechnology 17 1255] are explained by the model based on phonon-assisted tunneling theory. As is shown, the phonon –assisted tunneling theory can explain well the variation of current with temperature in all measured temperature range from 10 to 200 K over a wide range of electric fields. From the fit of experimental data with theory the density of states in the interface layer is derived and electron-phonon interaction constant is estimated.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 150 - 152
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Photonic Materials & Devices
ISBN: 978-1-4200-8505-1