Optical band gap energy of Er-doped TiO2 thin films

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Er-doped TiO2 thin films(0~1.0 mol% Er) having a thickness of 400 to 1200 nm were spin coated onto FTO glass substrate by varying PVP concentration. The optical properties of thin films was examined by glancing angle X-ray diffraction(GAXRD) and UV-vis spectrophotometer. GAXRD results revealed that the films consisted of anatase phase and FTO. The peak intensity of (101) and (200) anatase phase decreased with increasing the Er content. The lowest band gap energy of 2.81 eV was found for the 0.7mo% Er-TiO2 thin film having a thickness of 550 nm. Er ions may be attributed to shallow trapping sites in the band structure of TiO2.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites (Volume 1)
Published: May 12, 2013
Pages: 642 - 645
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Materials for Engineering Applications, Coatings, Surfaces & Membranes
ISBN: 978-1-4822-0581-7