Kiani A., Venkatakrishnan K., Tan B.
Ryerson University, CA
Keywords: amorphous silicon, laser materials processing, photothermal effect, thin film solar cell, ultra-fast laser
In this paper, we present a new method for direct-write laser fabrication of thin-film amorphous silicon (a-Si) on crystalline silicon substrate induced by femtosecond laser irradiation. Using megahertz frequency femtosecond laser pulses makes it possible to control laser fluence in the amorphization range of silicon under ambient condition. Finally, a thin-film of amorphous silicon is generated on the silicon substrate. It was observed a significant drop in light reflectance of the irradiated area (a-Si) in the visible range. This method can lead to promising solutions for solar cell fabrication techniques based on amorphorized silicon. In comparison with previous methods, our approach is single-step and both processing time and cost of fabrication are reduced. A Scanning Electron Microscope (SEM), a Micro-Raman, Energy Dispersive X-ray (EDX) spectroscopy and an optical spectrometer were used to investigate the properties of the amorphorized thin layer on Si-substrate.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2011 Clean Technology Conference and Trade Show
Published: June 13, 2011
Pages: 55 - 58
Industry sector: Energy & Sustainability
Topic: Solar Technologies
ISBN: 978-1-4398-8189-7