Sudhama C., Spulber O., McAndrew C., Thoma R.
Motorola SPS, US
Keywords: fringe-capacitance, MOSFET, novel, numerical simulation, poly-depletion, strong-inversion, TCAD
Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions gain more importance a
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 450 - 453
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4