Monte Carlo Modeling of Thin Film Deposition: Influence of Grain Boundaries on the Porosity of Barrier Layer Films

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We present Monte Carlo simulations of metallic thin films grown by sputter deposition from an infinite target. The Monte Carlo model includes ballistic deposition from the target, surface diffusion, and polycrystalline film growth. We study materials with low atomic mobility such as those involved in “barrier layer” films for silicon devices. We discuss the mechanism leading to columnar growth and the influence of the film orientation on structure and density. Finally, we show that polycrystalline films exhibit voids at the grain boundaries, which leads to columnar growth over a wider range of conditions than that for single crystal films.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 467 - 470
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6