Chen Y.
University of California, US
Keywords: modeling, nanoscale, self oxidation
The self-limiting oxidation method has been frequently used to fabricate the nano-scale (e.g., sub-5 nm) Si columns and widely reported in the recent literature [1, 2]. However, few theoretical modeling has been carried out to quantitatively describe the observed oxide growth behavior in such a small scale. Under an incompressible-oxide assumption, we extend a conventional 2-D model to give a closed-form solution for the nanoscale oxide growth. The model predicts the self-limiting growth behavior quite well.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 56 - 58
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0