Modeling of the Cosmic Radiation-Induced Failure Mechanism in High Power Devices

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In order to achieve a more robust design of semiconductor power devices with enhanced hardness against cosmic radiation we have been working on a physical model which is able to explain and to visualize the failure mechanism in a detailed and quantitative manner.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 632 - 635
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 0-9767985-2-2