Mid-IR integrated nanophotonics for chip-scale quantum optics applications


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A mid-IR nanophotonic architecture based on inter-sub-band transitions, along with experimental verification of the use of surface depletion as a means to control the host materials absorption properties is presented. Finite element simulations suggest this approach is suitable for the deterministic formation of a high quality quantum dot from a quantum well system allowing quantum optic functionality to be implemented at the chip scale. This architecture utilizes a novel hybrid plasmon/dielectric waveguide to confine all optical fields to the near surface region maximizing interactions between the field and the quantum dot transitions. Also discussed will be the use of plasmonic Bragg mirrors, to monolithically integrate a high brightness quantum cascade laser source directly to the waveguiding element.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: May 12, 2013
Pages: 17 - 20
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4822-0584-8