Metrology Development for the Nanoelectronics Industry at the National Institute of Standards and Technology

Dagata J.A., Richter C.A., Silver R.M., Vogel E., Martinez de Pinillos J.V.
NIST, US

Keywords: gate dielectrics, molecular electronics, nanoelectronics, nanolithography, thin films

The National Institute of Standards and Technology has provided and continues to provide critical metrology development for the semiconductor manufacturing industry as it moves from the microelectronic era into the nanoelectronic era. This presentation will describe the National Semiconductor Metrology Program, including a detailed discussion of several projects: Nanolithography Using Scanning Probe Oxidation; Atomic-Level Film Characterization; and Nanoelectronic Device Characterization.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: March 7, 2004
Pages: 354 - 357
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Materials for Engineering Applications, Coatings, Surfaces & Membranes
ISBN: 0-9728422-9-2