Maskless Lithography Using Patterned Amorphous Silicon Layer Induced by Femtosecond Laser Irradiation

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In this research, we reported a maskless lithography method by a combination of laser amorphization of silicon and wet alkaline etching. This technique can lead to a promising solution for maskless lithography because in comparison to the previous techniques, it involves less processing steps and requires simple equipment configuration. Scanning Electron Microscope (SEM), a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy analyses were used to evaluate the quality of amorphous layer and the etching process.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 276 - 279
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications
ISBN: 978-1-4398-3402-2