Iqbal M.A.
University of the Punjab, PK
Keywords: dispersion, DLTS, noise, transients, traps
The activation energy and capture cross section of the traps founds in GaAs field Effect transistors (GaAs FETS) have been measured both in ohmic and saturation region. A variety of transients found using frequency dispersion, generation recombination noise techniques and DLTS techniques. The measure properties indicate that thermal emission from these traps is not a simple exponential. The transient differ from one trap to another and the location of each traps are influenced by the device structure.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Pages: 83 - 86
Industry sector: Sensors, MEMS, Electronics
Topic: Energy Storage
ISBN: 978-1-4665-6275-2