Hammond J.S., Givan U., Paul D., Patolsky F.
Physical Electronics USA, US
Keywords: Auger electron spectroscopy, nanowire, SiGe
The lateral and depth distributions of the surface oxidation and the surface Phosphorous doping concentrations have been measured from an individual SixGe(1-x) 60 nm diameter nanowire with Auger Electron Spectroscopy combined with sputter ion depth profiling. The surface imaging spectroscopy characterization of the CVD-LVS grown nanowires interpret the conductivity measurements of the nanowires.
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites
Published: June 21, 2010
Pages: 21 - 24
Industry sector: Advanced Materials & Manufacturing
Topic: Materials Characterization & Imaging
ISBN: 978-1-4398-3401-5