Tang X.H., Yin Z.Y., Zhao J.H., Sentosa D.
NTU, SG
Keywords: InAs, MOCVD, quantum dots
InAs quantum dots grown on InGaAs.InP matrix by MOCVD has been studied. Formation of the InAs QDs with different growth conditions has been investigated. Using a two-step growth method, high density, uniform QDs have been grown. The emission of the QDs has been measured. The emission wavelength of the QDs reaches 2.3 um at 77K.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 145 - 148
Industry sector: Advanced Materials & Manufacturing
Topic: Advanced Manufacturing
ISBN: 0-9767985-8-1