In microsystems technology, new methods in testing and qualification are needed related to the dramatically smaller volume of microelectromecanical systems (MEMS). In single crystal silicon (SCSi) based devices, stress and loading in operation introduces defects during the MEMS life time and increases the risk of failure. Reliability studies on potential failure sources have an impact on MEMS design and are essential to assure the long term functioning of the device. In this paper, mechanical tests such as tensile tests on SiSC beams are discussed to assess the resistance of SCSi structures upon loading. Defects introduced by DRIE, thermal annealing, dicing and bonding and influence the crystalline perfection and have a direct impact on the mechanical properties of MEMS and their aging behavior. Strain, defects and deformations are analyzed using High Resolution X-ray Diffraction Methods (HRXRD), the influence of surface roughness is discussed and supporting simulations are done by Finite Element Method (FEM).
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 165 - 168
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems