Germanium antimony sulphide nano wires fabricated by chemical vapour deposition and e-beam lithography

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Germanium antimony sulphide (Ge-Sb-S) amorphous thin films and nano wires have been directly deposited and patterned on SiO2-on-silicon substrates by means of chemical vapour deposition, e-beam lithography and dry etching. The Ge-Sb-S thin films were formed at the deposition rate of approximately 10nm/min at a temperature of 300 degree C. In this way, Ge-Sb-S thin films with 100nm in depth were achieved in 10 minutes. The compositions of Ge-Sb-S thin films were characterized by micro-Raman and energy dispersive X-ray analysis techniques. A prototype device adopting the so-called phase-change line memory structure with a Ge-Sb-S nano wire (24nm x 100nm x 100nm thickness) was fabricated by e-beam lithography and reactive ion etching techniques with the electro-resist spin-coated on the sample for masking film with thickness of 100nm, patterned with an e-beam writer, then etched with SF6, CH4, and He gases, and finally stripping off the residual resist to complete a nano wire phase-change memory device. We are currently studying the phase-change properties of the Ge-Sb-S nano wire device through finite-element modelling. The preliminary results show this Ge-Sb-S nano wire devices have great potential for efficient, economic, fast switching (

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 96 - 99
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Photonic Materials & Devices
ISBN: 978-1-4200-8505-1