We report the fabrication and spectroscopic ellipsometry characterization of layer-by-layer assembled quantum dot multilayered films and their influence in the power conversion efficiency of silicon solar cells. The experimental performance of the resulting structure that possess downshifting and antireflective capabilities is compared to the theoretical predictions obtained from transfer matrix and FDTD simulations. The incorporation of the downshifting films on the front surface of the solar cell triggered an increase of 29.5% in the short circuit current density which is responsible for an increase in efficiency from 11.31% to 14.26%. The external quantum efficiency of the solar cell reproduced by the proposed theoretical formalism shows an excellent agreement with the experimental data, supporting the validity of the model and allowing the opto-electronic model assisted design of optimized downshifting structures for photovoltaic applications.
Journal: TechConnect Briefs
Volume: TechConnect Briefs 2021
Published: October 18, 2021
Pages: 207 - 210
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics, Sensors - Chemical, Physical & Bio