Watling J.R., Asenov A., Brown A.R., Svizhenko A., Anantram M.P.
University of Glasgow, UK
Keywords: density gradient, double gate MOSFET, fluctuations, source-to-drain tunnelling
We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain and trapped charge in the undoped channel of sub 10nm double-gate MOSEFTs as require by the Silicon roadmap.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 202 - 205
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9728422-1-7