Demonstration of Pulsed Silicon Raman Laser


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Recently, Raman effect in silicon has been pursued for light generation and amplification by utilizing high Raman gain coefficient of silicon. However, free carrier generation due to two photon absorption limited the achieving high Raman gain. Pulsed pumping technique has been utilized to mitigate free carrier accumulation and achieve high gain. In this paper, we report the demonstration of a Raman laser in silicon by pulsed pumping technique. A pump laser with 25 MHz repetition rate at 1540 nm and with 30 ps pulses is used to obtain Raman laser in silicon. Lasing is measured at 1675 nm. A clear lasing threshold is observed at 9W peak pulse power along with a slope efficiency of 8.5% above threshold. Additionally, temporal and spectral profiles of the silicon Raman laser are studied experimentally.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 324 - 326
Industry sector: Sensors, MEMS, Electronics
Topic: Photonic Materials & Devices
ISBN: 0-9767985-2-2