Neinhus B., Jungemann C., Meinerzhagen B.
Universitat Bremen, DE
Keywords: device simulation, impact ionization, noise
An e cient model for the simulation of terminal current noise in the presence of avalanche carrier generation is presented. Our approach is investigated by DD, HD, and MC noise simulations of a 1D N+NN+ structure. A comparison of the terminal current noise evaluated by the 2D HD and DD Langevin equations with full band Monte Carlo simulations exhibits excellent agreement between the MC and HD results.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 548 - 551
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-7-1