Solid state magnetic field sensors are examined. The use of III-V semiconductors in Hall effect sensors results in high bandwidth, fast response time, adequate spatiotemporal resolution, accuracy and sufficient measurement range. Despite significant advantages, there are drawbacks, such as noise, errors, nonlinearity, sensitivity, low thermal stability, etc. Noise attenuation and error reduction problems are researched. High-fidelity data analysis and filtering are accomplished using robust signal processing schemes. The results are experimentally substantiated enabling overall system’s functionality, performance and capabilities. The statistical models of noise are examined to solve data processing and data acquisition problems. The experimentally substantiated descriptive statistics empowers data-intensive analysis, data-driven design and optimization.
Journal: TechConnect Briefs
Volume: 3, Biotech, Biomaterials and Biomedical: TechConnect Briefs 2017
Published: May 14, 2017
Pages: 215 - 218
Industry sector: Sensors, MEMS, Electronics
Topics: Sensors - Chemical, Physical & Bio