Control of Pore Size in Nanoporous Ultralow Dielectrics

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As feature size and metal-to-metal space become smaller, ultralow dielectric materials are required to reduce signal delay and cross talk of interconnect. One of the most promising approach to reduce these problems is the introduction of pores into low-k material, However, the introduction of pores deteriorates mechanical properties while it reduces the dielectric constant. In this work, we prepared reactive porogens with trimethoxysilyl groups based on cyclodextrin (CD), glucose (GC), xylitol (XT). These reactive porogens were expected to have condensation reaction between the trimethoxysilyl groups in reactive porogens and silanol (Si-OH) groups in matrix. It was expected to prevent the porogen molecules from their aggregation during the curing of matrix and improve mechanical properties of ultralow dielectrics. The organosilicate matrix was synthesized from the copolymer of methyl trimethoxy silane 75 mol% and 1,2-bis(triethoxysilyl) ethane 25 mol%. Reactive porogen (TMSCD, TMSGC, TMSXT) was chemically modified through allylation and hydrosilylation.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2011: Advanced Materials, CNTs, Particles, Films and Composites
Published: June 13, 2011
Pages: 562 - 565
Industry sector: Advanced Materials & Manufacturing
Topics: Advanced Materials for Engineering Applications, Composite Materials
ISBN: 978-1-4398-7142-3