Schrag G., Künzig T., Niessner M., Wachutka G.
Technical University of Münich, DE
Keywords: FEA, rf MEMS switch, simulation
We present two problem-adapted, tailored modeling approaches for RF-MEMS switches which, in principle, are applicable to any capacitive MEMS device. They are based on finite element analysis (FEA) combined with analytical, lumped-element, and reduced-order modeling techniques. The first model has been tailored for detailed investigations on device level (problem-adapted FE model), while the second approach is suited for system-level analysis based on macromodels generated from a discretized FE model of the device. Both approaches enable the efficient, but yet physics-based simulation of the device characteristics, which is demonstrated by comparing the simulation results of two different designs of an RF-MEMS switch with optically measured data of its static and dynamic operation. See full PDF submission.
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2016
Published: May 22, 2016
Pages: 95 - 99
Industry sector: Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications
ISBN: 978-0-9975-1173-4