C-V Data and Geometry Parameters of Self-Assembled INAS/GAAS Quantum Rings

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In present work we focus on these problems and on the interpretation of the recent CV data given in W. Lei, C. Notthoff, A. Lorke, D. Reuter and A. D. Wieck (Appl. Phys. Lett. 96, 033111 (2010). We show that a variant of oscillator model used in this paper does not resolve known problem of the c-v measurements: the derived value of the energy-gate-voltage conversion coefficient (f=2) is in a disagreement with that obtained from CV experiments (f=8).

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 62 - 65
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 978-1-4398-7139-3