Bioreactor with Integrated Nanosensor for the Recording of Extracellular Potential of Nerve Cells: Response oo Inhibitors Record with Algan/Gan Field – Effect Transistor

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Recently sensors based on the group III nitrides attract growing interest in the scientific comunity. It has been shown that sensors made of this material are suitable for recording action potential of muscle cells or can serve as materials for biosensors and show outstanding properties with respect to biocompatibility.We report on the recording of the extra cellular potential of NG108-15 (mouse neuroblastoma x rat glioma hybrid) nerve cells as response to different neuron-inhibitors using an open gate Aluminium-Gallium-Nitride/Gallium – Nitride (AlGaN/GaN) electrolyte gate field effect transistor (EGFET) embedded in a bioreactor. Al0.28Ga0.72N/GaN heterostructures were grown by plasma induced molecular beam epitaxy on sapphire The sensor chip was mounted on a LTCC frame and is encapsulated in a special designed bioreactor with an Ag/AgCl reference electrode. The inhibition of acetylcholinesterase (AChE) was monitored with the system. The AlGaN/GaN-EGFETs show stable operation under physiological conditions, exhibit a very good signal resolution and are suitable for long-time measurements. They enable easy measurement procedures, which can be used in every laboratory using small quantities of biological material, for pharmaceutical screening, drugs detection or tumors analyzing.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2008: Life Sciences, Medicine & Bio Materials – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 2
Published: June 1, 2008
Pages: 566 - 568
Industry sectors: Medical & Biotech | Sensors, MEMS, Electronics
Topic: Chemical, Physical & Bio-Sensors
ISBN: 978-1-4200-8504-4