Annealing effects on the electrical and optical properties of ZnO nanorods/Si heterojunction diodes are studied. ZnO nanorods are grown on p-Si substrate by aquous chemical growth (ACG) method .As grown samples were annealed at 400 and 600 oC in air, oxygen and nitrogen ambient. Structural, optical and electrical characteristics are studied by Scanning Electron Microscopy (SEM), Photoluminescence (PL), Current–Voltage (I-V) and Capacitance-Voltage (C-V) measurements.Well aligned hexagonal–shaped vertical nanorods of a mean diameter of 160-200nm and approximately 1.2μm high are revealed in SEM. PL spectra indicated higher ultraviolet (UV) to visible emission ratio with a strong peak of near band edge emission (NBE) centered from 375-380 nm and very weak broad deep-level emissions (DLE) centered from 510-580 nm. It is observed that the UV emission is strongly enhanced after annealing in air, nitrogen and oxygen at 400 oC. To our knowledge this is the first report on simultaneous study of annealing effects on the optical and electrical properties of ZnO nanorods at 400 and 600 oC in air, oxygen and Nitrogen.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 68 - 71
Industry sector: Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices