An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current

Zhang C.

An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current

Keywords: gate oxide trap, interface trap, MOSFET reliability, subthreshold current

In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift in the semi-log plotted transfer characteristics, while interface trap influences subthreshold slope of the device. The above theory is verified by ISE-Dessis simulation. The results demonstrate that this method is effective and accurate for extracting parameters of devices with gate length less than 1μm.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 180 - 183
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 978-1-4398-7139-3