A simple route to synthesize impurity-free high-oriented SiOx nanowires

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Impurity-free silicon oxide nanowires were synthesized on a 3 cm x 3 cm alumina plate uniformly by thermal evaporation of a mixture of powder of graphite powders and Si-SiOx particles under argon atmosphere with a flow rate of 50 sccm at 1100 oC for 3 hours. The as-synthesized products characterized by field-emission scanning electron microscopy, field-emission transmission electron microscopy and energy-dispersive spectroscopy show that SiOx nanowires were of diameters ranging from 50-100 nm and the height is up to several millimeters. The growth mechanism of SiOx nanowires was studied and suggested to be the vapor-solid (VS) process.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 138 - 141
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Photonic Materials & Devices
ISBN: 978-1-4200-8505-1