This paper presents a new model of photoelectric phenomena taking place in MOS structures at low electric fields in the dielectric. Solutions of models equations are analyzed and discussed. Using these equations various photoelectric characteristics are calculated and compared with their counterparts taken experimentally. Excellement agreement between calculated and experimental characteristics, obtained for a wide range of different MOS structures, strongly supports the validity of the model. Applicability limits of this model are illustrated and discussed. The model finds applications in developing new, highly precise, photoelectric measurement methods of MOS structures. Two such methods are mentioned in this paper. One of the the methods has already been fully verified and has been successfully used in various investigations, while the other is being currently verified and optimized.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 262 - 265
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems