ultra-small MOSFETs – TechConnect Briefs

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]

3D Simulations of Ultra-Small MOSFETs: The Role of the Short Range Coulomb Interactions and Discrete Impurities on Device Terminal Characteristics

Gross W.J., Vasileska D., Ferry D.K., Intel Corporation, US

We have developed a three-dimensional particle based simulator with a coupled molecular dynamics routine that avoids the "double-counting" of the long-range portion of the Coulomb force. As opposed to drift-diffusion based simulators, the Monte Carlo [...]