two-dimensional analysis – TechConnect Briefs

Simulation of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

Nakano K., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs. However, it increases the parasitic capacitance, leading to the degradation of high-frequency performance. As another way to improve [...]

Simulation of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs with Double Passivation Layers

Horio K., Hanawa H., Shibaura Institute of Technology, JP

It is well known that the introduction of field plate increases the breakdown voltage of AlGaN/GaN HEMTs [1, 2]. However, it increases the parasitic capacitance, leading to the degradation of high-frequency performance. As another way [...]

Simulation of Lags and Current Collapse in Field-Plate AlGaN/GaN HEMTs with Different Types of Buffer Layers

Tsurumaki R., Noda N., Horio K., Shibaura Institute of Technology, JP

In AlGaN/GaN HEMTs, slow current transients are often observed even if the gate voltage VG or the drain voltage VD is changed abruptly. This is called gate lag or drain lag, and is problematic for [...]

Simulation of Current Slump Removal in Field-Plate GaAs MESFETs with a Thin Passivation Layer

Nomoto A., Sato Y., Horio K., Shibaura Institute of Technology, JP

In compound semiconductor FETs, slow current transients are often observed even if the drain voltage VD or the gate voltage VG is changed abruptly [1]. This is called drain lag or gate lag, and undesirable [...]

Simulation of Buffer Current Effects on Breakdown Voltage in AlGaN/GaN HEMTs Having Passivation Layers with Different Permittivity

Satoh Y., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of filed plate enhances the breakdown voltage in AlGaN/GaN HEMTs. This is because the electric field at the drain edge of the gate is reduced. However, the field [...]