tungsten – TechConnect Briefs

Tungsten for CMOS-MEMS Pirani and Ionization Vacuum Gauges

Wang J., Tang Z., Dalian University of Technology, CN

Tungsten is consider to be the most suitable material for the CMOS-MEMS vacuum gauges, including Pirani vacuum gauge and ionization vacuum gauge, due to its high temperature coefficient, resistant to the electromigration failure, high melting [...]

Improved RF Characteristics of Carbon Nanotube Interconnects with Deposited Tungsten Contacts

Vyas A.A., Madriz F., Kanzaki N., Wilhite P., Tan J., Yamada T., Yang C.Y., Santa Clara University, US

Carbon Nanofibers (CNFs) grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) are potential next-generation interconnect materials due to their high current capacity. We designed and fabricated a test structure for RF characterization of CNF interconnects [...]

Nano Tungsten Silicide Thin Film Deposition and its Integration with Poly-Silicon

Li M., Suryanarayanan Iyer R., Applied Materials Inc., US

The semiconductor transistor of 90 nm or below generation requires low resistance materials for gate metallization. A thin tungsten silicide (WSix) film is a candidate for the buffer material between poly-silicon and metal, such as [...]