thin films – Page 5 – TechConnect Briefs

Metrology Development for the Nanoelectronics Industry at the National Institute of Standards and Technology

Dagata J.A., Richter C.A., Silver R.M., Vogel E., Martinez de Pinillos J.V., NIST, US

The National Institute of Standards and Technology has provided and continues to provide critical metrology development for the semiconductor manufacturing industry as it moves from the microelectronic era into the nanoelectronic era. This presentation will [...]

Nano-bending Method to Identify the Residual Stresses of MEMS Films

Kim J.G., Kim J.H., Kim Y.H., Kim J.G., Kim J.H., Kim Y.H., Hahn J.H., Lee H.Y., Kim J.G., Kim J.H., Kim Y.H., Seoul National University, KR

Surface micro-machined MEMS frequently suffer from the residual stress which might significantly decrease the performance and reliability of micro devices. It is important to accurately measure the residual stresses at manufacturing step. The Stoney’s equation [...]

Numerical Investigations of Laser Induced Crystallization and Stress Development in Phase Change Electroceramic Materials

Pirch N., Baldus O., Waser R., Kreutz E.W., RWTH Aachen, DE

Barium-Strontium-Titanate, BST, in the stoichiometry Ba0.7Sr0.3TiO3 to Ba0.5Sr0.5TiO3 is been considered as a promising candidate to enter into the DRAM manufacturing technology. The incompatibility between the temperatures required to crystallize the ferro/para-electric layer into the [...]

Growth of Copper on Ag(100) at Experimental Deposition Rates Using TAD

Sprague J., Montalenti F., Voter A.F., Naval Research Laboratory, US

The initial stages of growth of (001) Cu films on (001) Ag substrates have been investigated using the temperature accelerated dynamics (TAD) method. The acceleration provided by this method made it possible to simulate the [...]

Numerical Investigations of Laser Induced Crystallization and Stress Development in Phase Change Electroceramic Materials

Pirch N., Baldus O., Waser R., Kreutz E.W., RWTH Aachen, DE

Barium-Strontium-Titanate, BST, in the stoichiometry Ba0.7Sr0.3TiO3 to Ba0.5Sr0.5TiO3 is been considered as a promising candidate to enter into the DRAM manufacturing technology. The incompatibility between the temperatures required to crystallize the ferro/para-electric layer into the [...]