source-to-drain tunnelling – TechConnect Briefs

Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs

Watling J.R., Asenov A., Brown A.R., Svizhenko A., Anantram M.P., University of Glasgow, UK

We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain [...]