source/drain extensions – TechConnect Briefs

Characteristic Fluctuation of Gate-All-Around Silicon Nanowire MOSFETs Induced by Random Discrete Dopants from Source/Drain Extensions

Sung W-L., National Chiao Tung University, TW

In this study, we explore characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) resulting from source/drain extensions. Compared with the results of source extension, asymmetric variations of characteristics induced by [...]